BF245C DATASHEET PDF

Philips Semiconductors. Product specification. N-channel silicon field-effect transistors. BFA; BFB; BFC. FEATURES. • Interchangeability of drain and. BF(1). BFA, BFA(2). BFB, BFB. BFC. VGS. .. “Typical” parameters which may be provided in SCILLC data sheets and/or. BFC datasheet, BFC pdf, BFC data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, N-Channel RF Amplifier.

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The gate-source input must be protected against static discharge during transport or handling. Device mounted on a printed-circuit board, minimum datasheet length mm, mounting pad for drain lead minimum mm mm. Measured under pulse conditions: Gate leakage current as a function of junction temperature; Fig. Transfer characteristics for BF5A; Jul.

Output characteristics for BF5A; Fig. Drain current as a function of junction temperature; typical values for BF5B. Drain current as a function of junction temperature; typical values for BF5C. Input tuned to minimum noise. Noise figure as a function of frequency; Jul 9.

BFC Datasheet pdf – N-Channel RF Amplifier – Fairchild Semiconductor

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No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. The LNA has a high input and.

Product overview Type number Package. Product overview Type number Package Configuration. General description The is a quad 2-input OR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages. Features 1 Low drain-source on-resistance: The input can be driven from either 3.

This feature allows the use of these. They are specified in compliance with. UNIT intended for use in applications requiring high bidirectional transient and. UNIT envelope suitable for surface mounting. All leads are isolated. UNIT thyristors in a plastic envelope, intended. Data Sheet June File Number UNIT thyristors in a plastic envelope. Rated with a minimum output power of 30W, it. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.

Three terminal adjustable current sources Features Operates from 1V to 40V 0.

Its top view construction makes it ideal as a low cost replacement of TO Input capacitance as low as 15pF. General Bf245x Figure 1. It incorporates high value emitter ballast resistors, gold. The high gain and. Start display at page:. Lizbeth Taylor 2 years ago Views: The LNA has a high input and More information. Product overview Type number Package More information. Product overview Type number Package Configuration More information.

Packaging and Pin Configuration. ESD protection for high-speed interfaces Rev. Product specification Supersedes data of Jul Quad 2-input OR gate Bf2455c. This enables the use of current limiting resistors to interface inputs to voltages More information.

Packaging and Internal Circuit. This feature allows the use of these More information. Datashwet 8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev.

Dual retriggerable monostable multivibrator with reset Rev. They are specified in compliance with More information. Product specification IC24 Data Handbook. UNIT intended for use in applications requiring high bidirectional transient and More information.

I T AV off-state voltages.

UNIT envelope suitable for surface mounting, More information. All leads are isolated More information. UNIT thyristors in a plastic envelope, intended More information. UNIT thyristors in a plastic envelope More information. Rated with a minimum output power of 30W, it More information.

NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. Three terminal adjustable current sources.